STL50NH3LL STMicroelectronics, STL50NH3LL Datasheet - Page 4

• Manufacturer Part Number: STL50NH3LL
• Description: MOSFET N-CH 30V 27A PWRFLAT6X5
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL50NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 965pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 27 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4114-2

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 8)
f=1 MHz gate DC bias = 0
test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
GS
= 25 0µA, V
=0
=15 V, I
= V
= 10 V, I
= 4.5 V, I
=10 V, I
=25 V, f=1 MHz,
=4.5 V
= Max rating,
= Max rating @125°C
= ±16 V
Test conditions
Test conditions
GS
, I
D
D
D
D
D
= 13 A
= 6.5 A
= 250 µA
= 6.5 A
= 6. 5A
GS
= 0
Min.
Min.
0.5
30
1
0.011
0.012
Typ.
Typ.
965
285
3.7
1.5
32
38
9
3
STL50NH3LL
0.013
0.015
Max.
Max.
±
2.5
100
12
10
1
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
Ω
S
Ω