STL150N3LLH5 STMicroelectronics, STL150N3LLH5 Datasheet - Page 4

• Manufacturer Part Number: STL150N3LLH5
• Description: MOSFET N-CH 30V 35A POWERFLAT6X5
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL150N3LLH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.75 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.00175 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 150 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.55V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8483-2

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
R
DSS
GSS
Q
oss
t
t
rss
iss
gs
gd
r
f
G
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
Doc ID 14092 Rev 4
V
V
V
V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
V
R
(see Figure 13)
=0
=15 V, I
= V
= 10 V, I
= 4.5 V, I
= 25 V, f=1 MHz,
=4.5 V
= Max rating,
= Max rating @125 °C
= ±22 V
DD
G
Test conditions
Test conditions
=4.7 Ω, V
Test conditions
=15 V, I
GS
, I
D
D
D
D
= 35 A
= 17.5 A
= 250 µA
= 17.5 A
GS
D
GS
= 17.5 A,
= 0
=10 V
Min.
Min.
30
1
Min.
-
-
-
-
0.0014
0.0019
Typ.
1.55
5800
1147
Typ.
13.4
14.9
127
1.1
40
Typ.
17.2
30.8
65.8
47.8
STL150N3LLH5
0.00175
0.0024
Max.
Max.
±
Max.
2.2
100
10
-
-
-
1
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
Ω
µA
µA
nA
ns
ns
ns
ns
Ω
Ω
V
V