STL150N3LLH5 STMicroelectronics, STL150N3LLH5 Datasheet - Page 5

• Manufacturer Part Number: STL150N3LLH5
• Description: MOSFET N-CH 30V 35A POWERFLAT6X5
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL150N3LLH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.75 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.00175 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 150 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.55V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8483-2

STL150N3LLH5
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 14092 Rev 4
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
Test conditions
= 35 A, V
= 35 A,
= 25 V
GS
=0
Electrical characteristics
Min.
-
-
-
-
Typ.
43.8
2.1
46
Max.
140
1.1
35
Unit
nC
ns
A
A
V
A
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