STP12NM50 STMicroelectronics, STP12NM50 Datasheet - Page 3

• Manufacturer Part Number: STP12NM50
• Description: MOSFET N-CH 500V 12A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r
• Type: Power MOSFETr

Specifications of STP12NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 50µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.35Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2666-5

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
Symbol
R
Symbol
dv/dt
I
SD
P
V
DM
R
V
thj-case
T
E
T
I
I
TOT
I
ISO
GS
thj-a
T
stg
D
D
AS
AS
≤ 12A, di/dt ≤ 400A/µs, V
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Insulation winthstand voltage (DC)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
=80%V
Parameter
Parameter
C
(BR)DSS
= 25°C
Parameter
C
C
=100°C
= 25°C
TO-220/D²PAK/
/D²PAK/I²PAK
TO-220-
I² PAK
1.28
0.78
160
7.5
12
48
--
-65 to 150
Value
Value
± 30
62.5
300
15
Value
400
Electrical ratings
6
TO-220FP
TO-220FP
7.5
2500
12
48
0.28
3.57
35
(1)
(1)
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
mJ
W
°C
V
V
A
A
A
A
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