STP12NM50 STMicroelectronics, STP12NM50 Datasheet - Page 4

• Manufacturer Part Number: STP12NM50
• Description: MOSFET N-CH 500V 12A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r
• Type: Power MOSFETr

Specifications of STP12NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 50µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.35Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2666-5

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
GS(th)
d(on)
Q
Q
DSS
GSS
fs
Q
R
oss
t
oss eq.
rss
iss
gs
gd
r
g
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on Delay Time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
V
V
V
V
R
(see Figure 14)
V
V
(see Figure 15)
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DD
G
DS
DS
GS
DS
GS
= 250 µA, V
= 4.7Ω, V
=0, V
=400V, I
= V
= 10V, I
=15V, I
=25V, f=1 MHz, V
=10V
= 250V, I
= Max rating,
= Max rating @125°C
= ±30V
Test conditions
Test conditions
GS
DS
, I
D
D
D
=0V to 400V
D
= 6A
= 6A
D
GS
= 50µA
= 12A
GS
= 6A,
= 10V
= 0
GS
=0
Min.
500
3
Min. Typ. Max.
Typ.
0.30
4
1000
250
5.5
1.6
20
90
20
10
28
18
8
oss
±
Max.
0.35
when V
10
100
1
5
39
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
ns
ns
S
Ω