STB160N75F3 STMicroelectronics, STB160N75F3 Datasheet - Page 13

• Manufacturer Part Number: STB160N75F3
• Description: MOSFET N-CH 75V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB160N75F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 6750pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7937-2; STB160N75F3

STB160N75F3 - STP160N75F3 - STW160N75F3
Dim
A1
A2
B2
C2
D1
E1
V2
L2
L3
C
D
G
M
R
A
B
E
L
2.49
0.03
1.14
0.45
1.23
8.95
4.88
1.27
Min
4.4
0.7
1.4
2.4
10
15
0°
mm
Typ
8.5
0.4
8
D²PAK mechanical data
15.85
Max
2.69
0.23
0.93
1.36
9.35
10.4
5.28
1.75
4.6
1.7
0.6
1.4
3.2
4°
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.055
0.094
0.50
Min
Package mechanical data
0.015
0.315
0.334
inch
Typ
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.625
0.126
Max
0.55
0.68
13/16