STB160N75F3 STMicroelectronics, STB160N75F3 Datasheet - Page 4

• Manufacturer Part Number: STB160N75F3
• Description: MOSFET N-CH 75V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB160N75F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 6750pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7937-2; STB160N75F3

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
C
C
GS(th)
DS(on)
Q
Q
DSS
GSS
Q
oss
rss
iss
gs
gd
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
rating,@125°C
V
V
D
DS
DS
GS
DS
GS
= 250µA, V
Test conditions
V
V
V
(see Figure 16)
= V
= 10V, I
= Max rating,
= Max
= ±20V
GS
DS
DD
=37.5V, I
GS
=25V, f=1 MHz, V
=10V
STB160N75F3 - STP160N75F3 - STW160N75F3
, I
D
D
Test conditions
= 60A
= 250µA
GS
D
= 0
= 120A
TO-220
TO-247
D²PAK
GS
=0
Min. Typ. Max Unit
Min
75
2
6750
1080
Typ
3.5
3.2
40
85
27
26
±
Max Unit
100
3.7
200
10
4
4
nC
nC
nC
mΩ
mΩ
pF
pF
pF
µA
µA
nA
V
V