SPB21N50C3 Infineon Technologies, SPB21N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPB21N50C3
• Description: MOSFET N-CH 560V 21A TO-263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB21N50C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 208W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: Q2088067; SP000013833; SPB21N50C3; SPB21N50C3INTR; SPB21N50C3XT

Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 I
Identical low-side and high-side switch.
Rev. 2.3
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=200A/us, V
DClink
=400V, V
5)
6)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
peak
<V
Page 3
BR, DSS,
V
I
V
f=1MHz
V
V
I
R
V
V
V
V
D
D
DS
GS
GS
DD
G
DD
DD
GS
DD
=13.1A
=21A,
=3.6Ω
≥2*I
=0V, V
=0V, V
=380V, V
=380V, I
=380V, I
=0 to 10V
=380V, I
Conditions
T
D
j
*R
<T
DS
DS
DS(on)max
j,max.
D
D
D
GS
=25V,
=400V
=21A
=21A,
=21A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
2400
1200
typ.
181
4.5
18
30
87
10
67
10
50
95
*f.
5
5
SPB21N50C3
2005-11-07
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
V
DSS
DSS
.
.