FDC653N Fairchild Semiconductor, FDC653N Datasheet - Page 4

• Manufacturer Part Number: FDC653N
• Description: MOSFET N-CH 30V 5A SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC653N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6.2 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC653NTR

Typical Electrical And Thermal Characteristics
0.03
0.01
10
0.3
0.1
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
30
10
Figure 9. Maximum Safe Operating Area.
3
1
0
0.1
I
D
R
SINGLE PULSE
0.05
0.02
0.01
= 5.0A
JA
0.5
0.2
0.1
0.0001
0.2
1
V
T
2
= See Note 1b
GS
A
= 25°C
= 10V
D = 0.5
V
0.2
0.5
0.1
4
0.05
DS
0.02
0.01
Single Pulse
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
6
0.001
V
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
DS
2
= 5V
8
15V
5
10
10V
10
0.01
12
30
14
50
0.1
t , TIME (sec)
1
1000
5
4
3
2
1
0
0.01
500
200
100
50
Figure 10. Single Pulse Maximum Power
0.1
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
1
GS
Dissipation.
= 0V
0.1
0.3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
T - T
Duty Cycle, D = t / t
10
1
1
J
R
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1b
3
R
10
SINGLE PULSE
JA
1
JA
(t)
T = 25°C
JA
=See note 1b
2
100
A
10
C iss
C oss
C rss
FDC653N Rev.B
100
300
300
30