PHT6NQ10T,135 NXP Semiconductors, PHT6NQ10T,135 Datasheet - Page 2

• Manufacturer Part Number: PHT6NQ10T,135
• Description: MOSFET N-CH 100V 6.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT6NQ10T,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055876135; PHT6NQ10T /T3; PHT6NQ10T /T3

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
R
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
SYMBOL PARAMETER
I
I
V
t
Q
j
j
= 25˚C unless otherwise specified
GSS
DSS
d on
r
d off
f
S
SM
rr
= 25˚C unless otherwise specified
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
g(tot)
gs
gd
rr
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
I
V
V
Resistive load
Measured tab to centre of die
Measured from source lead to source
bond pad
V
CONDITIONS
T
I
I
V
D
F
F
sp
GS
DS
GS
GS
DS
DD
GS
GS
GS
= 6 A; V
= 6 A; V
= 6 A; -dI
= 25 ˚C
= 0 V; I
= V
= 10 V; I
= 10 V; V
= 100 V; V
= 50 V; R
= 10 V; R
= 0 V; V
= 0 V; V
GS
; I
DD
GS
D
D
F
DS
/dt = 100 A/ s;
R
= 80 V; V
D
= 0 V
= 0.25 mA;
= 1 mA
D
G
= 25 V
= 3 A
GS
2
DS
= 25 V; f = 1 MHz
= 8.2 ;
= 5.6
= 0 V
= 0 V;
GS
= 10 V
T
T
T
T
T
j
j
j
j
j
= 150˚C
= 150˚C
= 150˚C
= -55˚C
= -55˚C
MIN.
MIN.
100
1.2
89
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
TYP. MAX. UNIT
0.05
Product specification
633
103
135
2.5
8.2
2.5
0.8
57
10
21
15
20
10
61
55
3
6
5
-
-
-
-
-
-
-
PHT6NQ10T
216
100
500
5.5
1.2
90
10
26
4
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.000
m
m
nA
nC
nC
nC
nH
nH
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
V
A
A