PHT6NQ10T,135 NXP Semiconductors, PHT6NQ10T,135 Datasheet - Page 5

• Manufacturer Part Number: PHT6NQ10T,135
• Description: MOSFET N-CH 100V 6.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT6NQ10T,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055876135; PHT6NQ10T /T3; PHT6NQ10T /T3

Philips Semiconductors
August 1999
N-channel TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Gate-source voltage, VGS (V)
Tj = 25 C
ID = 6A
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Gate charge, QG (nC)
VDD = 20 V
V
GS
= f(Q
G
VDD = 80 V
)
transistor
5
6
5
4
3
2
1
0
I
0
F
Source-Drain Diode Current, IF (A)
= f(V
VGS = 0 V
0.1
Fig.14. Typical reverse diode current.
SDS
0.2
); conditions: V
0.3
Source-Drain Voltage, VSDS (V)
0.4
0.5
150 C
0.6
GS
0.7
= 0 V; parameter T
0.8
Product specification
Tj = 25 C
PHT6NQ10T
0.9
1
Rev 1.000
1.1
1.2
j