PSMN034-100PS,127 NXP Semiconductors, PSMN034-100PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN034-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN034-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 86W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 23.8nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 32A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 34.5 mOhm @ 15A, 10V
• Gate Charge Qg: 23.8 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 86 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064325127

NXP Semiconductors
Table 6.
PSMN034-100PS_2
Objective data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R DSon
(S)
g fs
100
50
40
30
20
10
80
60
40
20
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
5
…continued
20
10
Conditions
I
I
V
S
S
DS
30
15
= 15 A; V
= 5 A; dI
All information provided in this document is subject to legal disclaimers.
= 50 V
V GS (V)
003aae110
003aae111
I D (A)
S
GS
40
20
/dt = 100 A/µs; V
Rev. 02 — 1 March 2010
= 0 V; T
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
j
= 25 °C; see
Fig 6.
Fig 8.
GS
(pF)
C
2000
1500
1000
(A)
I
500
= 0 V;
D
40
30
20
10
0
0
gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse capacitances as a function of
Output characteristics: drain current as a
0
0
Figure 17
10.0
6.5
1
5.5
PSMN034-100PS
5.0
4
2
Min
-
-
-
3
Typ
0.85
38
59
8
V
GS
© NXP B.V. 2010. All rights reserved.
V GS (V)
C
C
4
003aae109
003aae106
iss
rss
(V) =
V DS (V)
Max
1.2
-
-
4.7
4.5
4
12
5
Unit
V
ns
nC
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