PSMN034-100PS,127 NXP Semiconductors, PSMN034-100PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN034-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN034-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 86W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 23.8nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 32A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 34.5 mOhm @ 15A, 10V
• Gate Charge Qg: 23.8 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 86 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064325127

NXP Semiconductors
PSMN034-100PS_2
Objective data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
junction temperature
-60
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
60
60
max
min
typ
120
120
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003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
Rev. 02 — 1 March 2010
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
gate-source voltage
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN034-100PS
2
I
Q
D
GS
Q
min
GS2
Q
G(tot)
typ
Q
GD
4
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aaa508
(V)
03aa35
6
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