BUK9237-55A/C1,118 NXP Semiconductors, BUK9237-55A/C1,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9237-55A/C1,118
• Description: MOSFET N-CH 55V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9237-55A/C1,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 17.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 1236pF @ 25V
• Power - Max: 77W
• Mounting Type: Surface Mount
• Gate Charge Qg: 17.6 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 38 mOhms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 32 A
• Power Dissipation: 77 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Other names: 934061634118

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9237-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9237-55A
It is not possible to make connection to pin 2 of the SOT428 package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
Package
Name
DPAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (DPAK);
3 leads (one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 November 2010
Simplified outline
Conditions
I
R
T
V
see
SOT428 (DPAK)
D
…continued
j(init)
GS
DS
GS
= 32 A; V
Figure 13
= 5 V; I
= 44 V; T
= 50 Ω; V
1
= 25 °C; unclamped
mb
2
D
3
sup
= 15 A;
j
GS
= 25 °C;
≤ 30 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9237-55A
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
9.2
Version
SOT428
Max Unit
76
-
2 of 13
mJ
nC