BUK9237-55A/C1,118 NXP Semiconductors, BUK9237-55A/C1,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9237-55A/C1,118
• Description: MOSFET N-CH 55V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9237-55A/C1,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 17.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 1236pF @ 25V
• Power - Max: 77W
• Mounting Type: Surface Mount
• Gate Charge Qg: 17.6 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 38 mOhms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 32 A
• Power Dissipation: 77 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Other names: 934061634118

NXP Semiconductors
BUK9237-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
V
5
DD
= 14 V
10
(A)
I
S
100
80
60
40
20
V
0
15
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 44 V
G
(nC)
03na93
Rev. 3 — 9 November 2010
20
0.4
T
j
= 175 °C
0.8
Fig 14. Input, output and reverse transfer capacitances
(pF)
2500
C
2000
1500
1000
500
T
j
1.2
0
= 25 °C
10
as a function of drain-source voltage; typical
values
−2
V
SD
03na92
(V)
N-channel TrenchMOS logic level FET
C
C
C
1.6
iss
oss
rss
10
−1
BUK9237-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03na98
(V)
10
2
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