BUK9520-55A,127 NXP Semiconductors, BUK9520-55A,127 Datasheet

MOSFET N-CH 55V 54A TO220AB

BUK9520-55A,127

Manufacturer Part Number
BUK9520-55A,127
Description
MOSFET N-CH 55V 54A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9520-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
118W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
54 A
Power Dissipation
118000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056254127
BUK9520-55A
BUK9520-55A
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK9520-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 8 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
V
T
V
T
see
I
R
T
D
j
mb
j
j
j
j(init)
GS
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 25 °C;
= 48 A; V
Figure
Figure
= 25 °C; see
= 5 V; T
= 4.5 V; I
= 10 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
12; see
D
sup
mb
j
D
≤ 175 °C
= 25 A;
D
GS
= 25 A;
≤ 55 V;
= 25 °C;
= 25 A;
= 5 V;
Figure 2
Figure 3
Figure 13
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
15
17
-
Max Unit
55
54
118
21
18
20
115
V
A
W
mΩ
mΩ
mΩ
mJ

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BUK9520-55A,127 Summary of contents

Page 1

... BUK9520-55A N-channel TrenchMOS logic level FET Rev. 02 — 8 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved. ...

Page 3

... GS j(init) 03aa24 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET Min Typ Max - - - ...

Page 4

... DSon δ D. Conditions see Figure 4 vertical in still air ; SOT78 package −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET 03nc94 = 10 μ 100 μ 100 (V) DS Min Typ - - - 60 03nc95 t p δ = ...

Page 5

... SOT78 ; °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET Min Typ Max 0 1 2 500 - 2 100 - ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET 30 DSon Drain-source on-state resistance as a function of drain current; typical values ( Forward transconductance as a function of drain current ...

Page 7

... Fig 10. Gate-source voltage as a function of gate 03aa33 50 R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET 14V charge; typical values V ( ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 120 I S (A) 100 80 = 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET C iss C oss C rss 500 0 −2 − function of drain-source voltage; typical values 03nc86 = 25 °C ...

Page 9

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9520-55A separated from data sheet BUK9520_9620_55A-01. BUK9520_9620_55A-01 20010129 (9397 750 07794) BUK9520-55A ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 June 2010 Document identifier: BUK9520-55A ...

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