IRLR8726PBF International Rectifier, IRLR8726PBF Datasheet - Page 5

• Manufacturer Part Number: IRLR8726PBF
• Description: MOSFET N-CH 30V 86A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8726PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 86A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 75 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
100
0.1
10
80
60
40
20
1
0
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.10
0.02
0.01
0.05
Case Temperature
50
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
Fig 10. Threshold Voltage vs. Temperature
τ
1
Ci
2.5
2.0
1.5
1.0
0.5
i/Ri
R
-75 -50 -25
1
R
1
0.001
τ
2
R
τ
2
2
R
IRLR/U8726PbF
2
R
τ
3
3
T J , Temperature ( °C )
R
τ
3
3
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
25
R
4
τ
4
R
4
4
τ
50
C
τ
0.01
Ri (°C/W)
0.014297 0.000003
0.373312
1.010326 0.000973
0.602065 0.007272
75
I D = 500µA
I D = 50µA
I D = 25µA
100 125 150 175
τι (sec)
0.00009
5
0.1