IRLR/U2705 IRF [International Rectifier], IRLR/U2705 Datasheet

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Logic-Level Gate Drive Ultra Low On-Resistance l l Surface Mount (IRLR2705) Straight Lead (IRLU2705) l Advanced Process Technology l l Fast Switching Fully Avalanche Rated l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 100 BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 T ...

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1MHz iss 1200 rss iss oss ds gd 1000 800 C oss 600 400 ...

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LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 ...

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D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

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D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period ...

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A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 5.97 (.235) 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 0.89 (.035) 3X 0.64 (.025) 1.14 (.045) 2X 0.25 (.010) 0.76 (.030) 2.28 ...

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A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...

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TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...