IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF6216TRPBF
• Description: MOSFET P-CH 150V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6216TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 1.3A, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
5.0
0.1

TOP
BOTTOM
-V
5.5
VGS
-15V
-12V
-10V
-8.0V
-7.0V
GS
, Gate-to-Source Voltage (V)
6.0
1

T = 25
J
6.5


°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25
C
DS
J
= -50V
7.0
10

T = 150
J
°
C
7.5
°
C
8.0
100
Fig 2. Typical Output Characteristics
D
100
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60

TOP
BOTTOM

I
D
=
-40
-V
-2.2A
DS
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-20
T , Junction Temperature
, Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20
40

60
IRF6216
20µs PULSE WIDTH
T = 150
J
80
10
-5.0V
100

°
( C)
C
V
°
120
GS
=
140
-10V
3
160
100