IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF6216TRPBF
• Description: MOSFET P-CH 150V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6216TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 1.3A, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diode Characteristics
IRF6216
Dynamic @ T
Avalanche Characteristics
Static @ T
V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
V
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
-150
–––
-3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.7
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.17
1280 –––
1290 –––
–––
––– 0.240
–––
–––
––– -250
––– -100
–––
–––
220
220
–––
–––
–––
310
7.2
80
33
15
18
15
33
26
53
99
–––
-5.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
120
460
-25
-2.2
–––
11
23
49
-19
µA
nA
nC
ns
nS
nC
V/°C
pF
V
V
S
A
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs ƒ
integral reverse
D
D
Reference to 25°C, I
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= -1.3A
= -1.3A
= 25°C, I
= 25°C, I
= 6.5
= 0V, I
= -10V, I
= V
= -150V, V
= -120V, V
= -20V
= 20V
= -50V, I
= -120V
= -10V,
= -75V
= -10V ƒ
= 0V
= -25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
DS
DS
Conditions
= -250µA
D
D
Conditions
Conditions
= -1.3A, V
= -1.3A
= -250µA
= -1.3A
= -1.3A
GS
GS
= 0V to -120V
Max.
= -1.0V, ƒ = 1.0MHz
= -120V, ƒ = 1.0MHz
200
-4.0
= 0V
= 0V, T
www.irf.com
D
= -1mA ƒ
GS
ƒ
J
G
= 0V ƒ
= 125°C
Units
mJ
A
D
S