IRF6614 International Rectifier, IRF6614 Datasheet - Page 4

• Manufacturer Part Number: IRF6614
• Description: MOSFET N-CH 40V DIRECTFET-ST
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12.7A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2560pF @ 20V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Dual Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.7 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 3.6 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 27 ns
• Lead Free Status / Rohs Status: No

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 6. Typical Transfer Characteristics
Fig 4. Typical Output Characteristics
100.0
4000
3000
2000
1000
1000
10.0
0.01
100
0.1
1.0
0.1
10
0
1
0.1
1.5
1
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.3V
1
Ciss
2.5
Coss
Crss
V DS = 15V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
3.0
10
TOP
BOTTOM
3.5
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.3V
100
4.0
100
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
30
25
20
15
10
10
1
5
-60 -40 -20
0.1
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance Vs.
I D = 12.7A
V GS = 10V
T A = 25°C
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
20
0
I D , Drain Current (A)
2.3V
1
20
40
≤ 60µs PULSE WIDTH
Tj = 150°C
40
60
10
80 100 120 140 160
TOP
BOTTOM
V GS = 3.0V
V GS = 3.5V
V GS = 4.0V
V GS = 4.5V
V GS = 5.0V
V GS = 10V
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60
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.3V
100
80