IRF6614 International Rectifier, IRF6614 Datasheet - Page 7

• Manufacturer Part Number: IRF6614
• Description: MOSFET N-CH 40V DIRECTFET-ST
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12.7A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2560pF @ 20V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Dual Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.7 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 3.6 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 27 ns
• Lead Free Status / Rohs Status: No

DirectFET™ Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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