STP140NF75 STMicroelectronics, STP140NF75 Datasheet - Page 3

• Manufacturer Part Number: STP140NF75
• Description: MOSFET N-CH 75V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP140NF75

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 218nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Forward Transconductance Gfs (max / Min): 160 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 150A
• Drain Source Voltage Vds: 24V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5894-5; STP140NF75

STB140NF75 - STP140NF75-1 - STP140NF75
1
Electrical ratings
Table 1.
1. Value limited by wire bonding
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
1. for 10 sec. 1.6mm from case
Rthj-case
Rthj-amb
Symbol
dv/dt
SD
E
V
I
DM
I
I
V
V
AS
T
T
P
D
D
DGR
≤ 120A, di/dt ≤ 400A/µs, V
T
DS
GS
stg
J
tot
(1)
(1)
j
(2)
(4)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 60A, V
DD
≤ V
DD
(BR)DSS
Parameter
= 30V
C
GS
= 25°C
, Tj ≤ T
GS
= 20 kΩ)
= 0)
JMAX
C
C
= 25°C
= 100°C
(1)
-55 to 175
Value
± 20
2.08
120
100
480
310
750
75
75
10
Electrical ratings
0.48
62.5
300
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
°C/W
°C/W
°C
3/18