STP140NF75 STMicroelectronics, STP140NF75 Datasheet - Page 9

MOSFET N-CH 75V 120A TO-220

STP140NF75

Manufacturer Part Number
STP140NF75
Description
MOSFET N-CH 75V 120A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP140NF75

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
218nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Forward Transconductance Gfs (max / Min)
160 S
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
150A
Drain Source Voltage Vds
24V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5894-5
STP140NF75

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STB140NF75 - STP140NF75-1 - STP140NF75
Figure 17. Allowable lav vs time in avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
P
E
Where:
I
P
t
To derate above 25 °C, at fixed I
I
Where:
Z
equal to T
AV
AV
AV
th
D(AVE)
AS(AR)
D(AVE)
is the allowable current in avalanche
is the time in avalanche
= 2 * (T
= K * R
= 0.5 * (1.3 * B
is the average power dissipation in avalanche (single pulse)
= P
AV
th
jmax
D(AVE)
.
is the value coming from normalized thermal response at fixed pulse width
- T
CASE
* t
AV
VDSS
)/ (1.3 * B
* I
AV
AV
VDSS
)
, the following equation must be applied:
* Z
th
)
Electrical characteristics
9/18

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