IRFS4010-7PPBF International Rectifier, IRFS4010-7PPBF Datasheet - Page 3

MOSFET N-CH 100V 190A D2PAK-7

IRFS4010-7PPBF

Manufacturer Part Number
IRFS4010-7PPBF
Description
MOSFET N-CH 100V 190A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS4010-7PPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 110A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
190A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
9830pF @ 50V
Power - Max
380W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
190 A
Power Dissipation
380 W
Mounting Style
SMD/SMT
Gate Charge Qg
150 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS4010-7PPBF
Manufacturer:
IR
Quantity:
12 000
Part Number:
IRFS4010-7PPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
1
2
Fig 1. Typical Output Characteristics
TOP
BOTTOM
4.0V
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
10
1
C iss
C rss
C oss
≤ 60µs PULSE WIDTH
Tj = 25°C
4
f = 1 MHZ
V DS = 50V
≤ 60µs PULSE WIDTH
T J = 25°C
5
100
10
6
1000
100
7
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
14.0
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
2.5
2.0
1.5
1.0
0.5
10
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 110A
I D = 110A
V GS = 10V
25
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
4.0V
Q G , Total Gate Charge (nC)
50
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
75 100 125 150 175 200 225
1
V DS = 80V
V DS = 50V
≤ 60µs PULSE WIDTH
Tj = 175°C
10
100
3

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