IRFS4010-7PPBF International Rectifier, IRFS4010-7PPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS4010-7PPBF
• Description: MOSFET N-CH 100V 190A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4010-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 190A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 9830pF @ 50V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 190 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 150 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
100
200
180
160
140
120
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
80
60
40
20
0
1
Fig 11. Typical C
0.0
25
0 10 20 30 40 50 60 70 80 90 100 110
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
50
T J = 175°C
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
0.5
75
OSS
100
T J = 25°C
Stored Energy
125
1.0
V GS = 0V
150
175
1.5
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1400
1200
1000
100
125
120
115
110
105
100
800
600
400
200
0.1
10
95
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
DC
10msec
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
75
1msec
100µsec
100
TOP
BOTTOM 110A
100
125
150
I D
38A
21A
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1000
175