IXFB82N60P IXYS, IXFB82N60P Datasheet - Page 4

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IXFB82N60P

Manufacturer Part Number
IXFB82N60P
Description
MOSFET N-CH 600V 82A PLUS 264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFB82N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
82A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
82 A
Power Dissipation
1250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
82
Rds(on), Max, Tj=25°c, (?)
0.075
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB82N60P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
120
110
100
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
75
50
25
100
0
0
3.5
0.3
0
0.4
f = 1 MHz
4
5
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
0.6
Intrinsic Diode
V
15
V
0.7
V
T
GS
SD
DS
J
5
= 125ºC
- Volts
- Volts
- Volts
0.8
20
5.5
T
J
0.9
= 125ºC
25
- 40ºC
25ºC
T
J
1
6
= 25ºC
30
C iss
C oss
C rss
1.1
6.5
35
1.2
1.3
40
7
1,000
100
160
140
120
100
10
10
80
60
40
20
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
T
J
R
T
T
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
DS(on)
= - 40ºC
J
C
D
G
DS
25
125ºC
= 150ºC
= 25ºC
= 41A
= 10mA
25ºC
20
= 300V
Limit
50
Fig. 8. Transconductance
40
75
Q
Fig. 10. Gate Charge
G
- NanoCoulombs
I
D
100
V
- Amperes
DS
60
- Volts
125
100
DC
80
150
IXFB 82N60P
175
100
200
120
225
25µs
100µs
1ms
10ms
1000
250
140

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