IXFB 50N80Q2 IXYS Corporation, IXFB 50N80Q2 Datasheet
IXFB 50N80Q2
Manufacturer Part Number
IXFB 50N80Q2
Description
TRANS MOSFET N-CH 800V 50A 3PLUS 264
Manufacturer
IXYS Corporation
Datasheet
1.IXFB_50N80Q2.pdf
(4 pages)
© 2004 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
F
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
stg
L
c
DGR
GS
GSM
AR
D
JM
DSS
AS
GS(th)
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting Force
Test Conditions
V
V
V
V
V
V
S
Note 1
C
C
C
C
C
C
J
J
J
GS
DS
GS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 10 V, I
= V
= V
= 0 V, I
= ±30 V, V
= 0 V
DM
GS
rr
DSS
, di/dt ≤ 100 A/µs, V
TM
, I
D
D
= 1mA
= 8mA
D
= 0.5 • I
G
DS
= 2 Ω
= 0
g
, Low Intrinsic R
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
= 25°C
= 125°C
DSS
IXFB 50N80Q2
JM
g
min.
800
2.5
Characteristic Values
-55 ... +150
-55 ... +150
30...120/7.5...27 N/lb
Maximum Ratings
typ.
800
800
±30
±40
200
890
150
300
5.0
50
50
60
20
10
max.
±200 nA
0.15 Ω
50 µA
5.0 V
3 mA
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
V
J
V
I
R
t
PLUS 264
G = Gate
S = Source
Features
Applications
Advantages
D25
rr
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Pulse generation
Laser drivers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
PLUS 264
mounting
Space savings
High power density
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 300 ns
G
D
S
TM
=
=
=
TM
(IXFB)
package for clip or spring
0.15 Ω Ω Ω Ω Ω
800 V
50 A
D = Drain
TAB = Drain
DS99005B(09/04)
(TAB)
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IXFB 50N80Q2 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2004 IXYS All rights reserved IXFB 50N80Q2 g Maximum Ratings 800 = 1 MΩ 800 GS ±30 ±40 50 200 5.0 ≤ DSS 890 -55 ... +150 150 -55 ... +150 300 30...120/7.5...27 N/lb ...
Page 2
... V = 100 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 3
Fig. 1. Output Characteristics @ 25 Deg 10V Volts DS Fig. 3. Output Characteristics @ 125 Deg ...
Page 4
Fig. 7. Input Adm ittance º - º º 125 3 Volts GS Fig. 9. Source Current vs. Source-To- Drain ...