NTJS4405NT1G ON Semiconductor, NTJS4405NT1G Datasheet

MOSFET N-CH 25V 1A SOT-363

NTJS4405NT1G

Manufacturer Part Number
NTJS4405NT1G
Description
MOSFET N-CH 25V 1A SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTJS4405NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
60pF @ 10V
Power - Max
630mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.5 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1 A
Power Dissipation
630 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTJS4405NT1GOSTR

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Manufacturer
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Price
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Manufacturer:
ON
Quantity:
30 000
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Manufacturer:
ON/安森美
Quantity:
20 000
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Quantity:
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Company:
Part Number:
NTJS4405NT1G
Quantity:
100
Company:
Part Number:
NTJS4405NT1G
Quantity:
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NTJS4405N
Small Signal MOSFET
25 V, 1.2 A, Single, N−Channel, SC−88
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
MAXIMUM RATINGS
Continuous Drain Current
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
ESD Rating − Machine Model
Junction−to−Lead – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient − t v 5 s (Note 1)
Advance Planar Technology for Fast Switching, Low R
Higher Efficiency Extending Battery Life
Pb−Free Packages are Available
Boost and Buck Converter
Load Switch
Battery Protection
(Cu area = 1.127 in sq [1 oz] including traces).
(Note 1)
(1/8″ from case for 10 s)
Rating
Rating
(T
J
Steady
= 25°C unless otherwise noted)
t < 5 s
State
Steady State
t
p
t v 5 s
= 10 ms
T
T
T
A
A
A
= 25°C
= 25°C
= 75°C
Symbol
Symbol
V
T
R
R
R
V
I
P
P
T
STG
T
DSS
DM
I
I
I
qJA
qJA
GS
qJL
D
D
S
J
D
D
L
,
−55 to
Value
"8.0
+150
0.80
0.63
0.89
Max
260
250
102
200
140
1.2
1.0
3.7
0.8
25
DS(on)
1
°C/W
Unit
Unit
°
°C
W
W
V
V
A
A
A
A
V
C
†For information on tape and reel specifications,
NTJS4405NT1
NTJS4405NT1G
NTJS4405NT4
NTJS4405NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
SC−88/SOT−363
(BR)DSS
25 V
CASE 419B
Device
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
Gate
TS
M
G
http://onsemi.com
249 mW @ 4.5 V
299 mW @ 2.7 V
3
R
(Pb−Free)
(Pb−Free)
Package
= Device Code
= Date Code
= Pb−Free Package
Source
DS(on)
SC−88
SC−88
SC−88
SC−88
Drain
MARKING DIAGRAM &
N−Channel
Publication Order Number:
PIN ASSIGNMENT
Typ
1 2 5 6
6
1
4
10,000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
D
D
TS M G
Shipping†
D
D
G
NTJS4405N/D
I
G
S
D
1.2 A
Max

Related parts for NTJS4405NT1G

NTJS4405NT1G Summary of contents

Page 1

... G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTJS4405NT1 SC−88 3000 / Tape & Reel NTJS4405NT1G SC−88 3000 / Tape & Reel (Pb−Free) NTJS4405NT4 SC−88 10,000 / Tape & Reel NTJS4405NT4G SC−88 10,000 / Tape & Reel (Pb−Free) † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

TYPICAL PERFORMANCE CURVES 4 3 5.5 V 4.5 V 3.5 3 2.5 2 1 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

TYPICAL PERFORMANCE CURVES 150 125 C iss 100 C rss rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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