NTJS4405NT1G ON Semiconductor, NTJS4405NT1G Datasheet - Page 4

• Manufacturer Part Number: NTJS4405NT1G
• Description: MOSFET N-CH 25V 1A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS4405NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 630mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1 A
• Power Dissipation: 630 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJS4405NT1GOSTR

1000
150
125
100
100
75
50
25
10
0
1
10
1
Figure 9. Resistive Switching Time Variation
C
V
I
V
C
D
DD
GS
V
iss
rss
= 0.5 A
DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
= 6.0 V
= 4.5 V
5
t
t
= 0 V
d(off)
d(on)
V
Figure 7. Capacitance Variation
t
t
r
R
GS
f
C
G
rss
, GATE RESISTANCE (OHMS)
0
vs. Gate Resistance
V
DS
TYPICAL PERFORMANCE CURVES
V
VOLTAGE (VOLTS)
GS
5
= 0 V
10
10
15
T
J
20
= 25°C
http://onsemi.com
C
C
oss
iss
100
25
4
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
(T
0.2
5
4
3
2
1
0
0
J
= 25°C unless otherwise noted)
Figure 10. Diode Forward Voltage vs. Current
V
T
Drain−to−Source Voltage vs. Total Charge
GS
J
V
0.3
V
= 25°C
SD
GS
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Q
= 4.5 V
Figure 8. Gate−to−Source and
GS
0.4
Q
0.2
g
, TOTAL GATE CHARGE (nC)
0.5
Q
G(TOT)
0.6
Q
0.4
GD
0.7
V
DS
0.8
= 5.0 V
0.6
I
T
D
J
= 0.95 A
= 25°C
0.9
0.8
1