ATF-55143-TR1G Avago Technologies US Inc., ATF-55143-TR1G Datasheet - Page 14

• Manufacturer Part Number: ATF-55143-TR1G
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-55143-TR1G

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.7dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 270 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.6dB
• No. Of Pins: 4
• Dc Current Gain Min (hfe): 17.7
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1573-2

ATF-55143 Applications Information
Introduction
Avago Technologies’ ATF‑55143 is a low noise
enhancement mode PHEMT designed for use in low cost
commercial applications in the VHF through 6 GHz fre‑
quency range. As opposed to a typical depletion mode
PHEMT where the gate must be made negative with
respect to the source for proper operation, an enhance‑
ment mode PHEMT requires that the gate be made more
positive than the source for normal operation. Therefore
a negative power supply voltage is not required for an
enhancement mode device. Biasing an enhancement
mode PHEMT is much like biasing the typical bipolar
junction transistor. Instead of a 0.7 V base to emitter volt‑
age, the ATF‑55143 enhancement mode PHEMT requires
about a 0.47V potential between the gate and source for
a nominal drain current of 10 mA.
Matching Networks
The techniques for impedance matching an enhance‑
ment mode device are very similar to those for matching
a depletion mode device. The only difference is in the
method of supplying gate bias. S and Noise Parameters
for various bias conditions are listed in this data sheet.
The circuit shown in Figure 33 shows a typical LNA cir‑
cuit normally used for 900 and 1900 MHz applications
(Consult the Avago Technologies website for application
notes covering specific applications). High pass imped‑
ance matching networks consisting of L1/C1 and L4/C4
provide the appropriate match for noise figure, gain, S11
and S22. The high pass structure also provides low fre‑
quency gain reduction which can be beneficial from the
standpoint of improving out‑of‑band rejection.
INPUT
Figure 33. Typical ATF-55143 LNA with Passive Biasing.
Capacitors C2 and C5 provide a low impedance in‑band
RF bypass for the matching networks. Resistors R3 and
R4 provide a very important low frequency termination
for the device. The resistive termination improves low
frequency stability. Capacitors C3 and C6 provide the
low frequency RF bypass for resistors R3 and R4. Their
value should be chosen carefully as C3 and C6 also pro‑
vide a termination for low frequency mixing products.
These mixing products are as a result of two or more in‑
14
Zo
R1
R5
R4
C1
L1
C3
C2
R2
Q1
L2
L3
Vdd
L4
R3
C5
C6
C4
Zo
OUTPUT
band signals mixing and producing third order in‑band
distortion products. The low frequency or difference
mixing products are terminated by C3 and C6. For best
suppression of third order distortion products based on
the CDMA 1.25 MHz signal spacing, C3 and C6 should
be 0.1 µF in value. Smaller values of capacitance will
not suppress the generation of the 1.25 MHz difference
signal and as a result will show up as poorer two tone
IP3 results.
Bias Networks
One of the major advantages of the enhancement
mode technology is that it allows the designer to be
able to dc ground the source leads and then merely
apply a positive voltage on the gate to set the desired
amount of quiescent drain current I
Whereas a depletion mode PHEMT pulls maximum
drain current when V
PHEMT pulls only a small amount of leakage current
when V
device threshold voltage, will drain current start to flow.
At a V
current I
suggests a minimum and maximum V
desired amount of drain current will be achieved. It is
also important to note that if the gate terminal is left
open circuited, the device will pull some amount of
drain current due to leakage current creating a voltage
differential between the gate and source terminals.
Passive Biasing
Passive biasing of the ATF‑55143 is accomplished by
the use of a voltage divider consisting of R1 and R2. The
voltage for the divider is derived from the drain voltage
which provides a form of voltage feedback through the
use of R3 to help keep drain current constant. Resis‑
tor R5 (approximately 10kΩ) is added to limit the gate
current of enhancement mode devices such as the
ATF‑55143. This is especially important when the device
is driven to P
Resistor R3 is calculated based on desired V
available power supply voltage.
R3 =
V
V
I
I
age divider network.
ds
BB
DD
ds
is the desired drain current.
is the current flowing through the R1/R2 resistor volt‑
is the device drain to source voltage.
is the power supply voltage.
V
ds
I
DD
ds
gs
of 2.7V and a nominal V
d
= 0V. Only when V
– V
+ I
will be approximately 10 mA. The data sheet
BB
ds
1dB
p
or P
(1)
SAT
.
gs
= 0V, an enhancement mode
gs
is increased above V
gs
d
.
of 0.47 V, the drain
gs
over which the
ds
, I
ds
th
, the
and