ATF-55143-TR1G Avago Technologies US Inc., ATF-55143-TR1G Datasheet - Page 3

• Manufacturer Part Number: ATF-55143-TR1G
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-55143-TR1G

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.7dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 270 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.6dB
• No. Of Pins: 4
• Dc Current Gain Min (hfe): 17.7
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1573-2

ATF-55143 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
Input
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between
an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
3
A
= 25°C, RF parameters measured in a test circuit for a typical device
Line Including
Transmission
(0.3 dB loss)
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1dB Compressed
Output Power
Gate Bias T
50 Ohm
rd
Order
[1]
[1]
[1]
[1]
Matching Circuit
Γ_mag = 0.4
Γ_ang = 83°
(0.3 dB loss)
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Input
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 2 mA
Vds = 2.7V, Vgs = 0V
Vds = 2.7V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
Vgd = Vgs = ‑2.7V
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
DUT
Matching Circuit
Γ_ang = -26°
Γ_mag = 0.5
(1.2 dB loss)
Output
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.3
0.18
—
110
—
—
—
15.5
—
22.0
—
—
—
Line Including
Transmission
(0.3 dB loss)
Drain Bias T
50 Ohm
Typ.
0.47
0.37
0.1
220
—
0.6
0.3
17.7
21.6
24.2
22.3
14.4
14.2
[2]
Output
Max.
0.65
0.53
3
285
95
0.9
—
18.5
—
—
—
—
—