PD20010STR-E STMicroelectronics, PD20010STR-E Datasheet - Page 3

• Manufacturer Part Number: PD20010STR-E
• Description: TRANS N-CH 40V POWERSO-10RF STR
• Manufacturer: STMicroelectronics

Specifications of PD20010STR-E

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: 497-10095-2; PD20010STR-E

1
1.1
1.2
Electrical data
Maximum ratings
T
Table 2.
Thermal data
Table 3.
CASE
V
Symbol
Symbol
(BR)DSS
P
R
T
V
= 25 °C
DISS
T
STG
I
thJC
GS
D
J
Absolute maximum ratings
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
C
= 70 °C)
-65 to +150
-0.5 to +15
Value
Value
165
1.6
40
59
5
°C/W
Unit
Unit
°C
°C
W
V
V
A
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