PD20010STR-E STMicroelectronics, PD20010STR-E Datasheet - Page 8

• Manufacturer Part Number: PD20010STR-E
• Description: TRANS N-CH 40V POWERSO-10RF STR
• Manufacturer: STMicroelectronics

Specifications of PD20010STR-E

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: 497-10095-2; PD20010STR-E

Note:
8/12
Table 9.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 6.
Dim.
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
D
E
G
a
b
F
c
PowerSO-10RF straight lead mechanical data
Package dimensions
15.15
Min.
1.62
0.15
0.23
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
10 deg
6 deg
mm.
Typ.
1.67
5.53
0.27
15.4
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
Max.
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
CRITICAL DIMENSIONS:
- Overall width (L)
0.064
0.134
0.046
0.005
0.212
0.008
0.370
0.290
0.595
0.365
0.286
0.231
Min.
10 deg
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch.
Typ.
0.05
0.01
0.37
0.24
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
Max.
0.01