BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 2

• Manufacturer Part Number: BF1206,115
• Description: MOSFET N-CH DUAL GATE 6V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1206,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057297115; BF1206; BF1206

NXP Semiconductors
FEATURES
 Two low noise gain controlled amplifiers in a single
 Superior cross-modulation performance during AGC
 High forward transfer admittance
 High forward transfer admittance to input capacitance
APPLICATIONS
 Gain controlled low noise amplifiers for VHF and UHF
DESCRIPTION
The BF1206 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor is
encapsulated in SOT363 micro-miniature plastic package.
QUICK REFERENCE DATA
2003 Nov 17
Per MOS-FET; unless otherwise specified
V
I
y
C
C
X
NF
D
SYMBOL
package
ratio.
applications with 5 V supply voltage, such as digital and
analog television tuners.
DS
mod
Dual N-channel dual-gate MOS-FET
ig1-s
rss
fs

drain-source voltage
drain current (DC)
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
cross-modulation
noise figure
PARAMETER
amp. a: I
amp. b: I
amp. a: I
amp. b: I
f = 1 MHz
amp. a: input level for k = 1% at
40 dB AGC
amp. b: input level for k = 1% at
40 dB AGC
amp. a: f = 400 MHz; I
amp. b: f = 800 MHz; I
amp. a: f = 11 MHz; I
amp. b: f = 11 MHz; I
2
PINNING - SOT363
handbook, halfpage
D
D
D
D
= 18 mA
= 12 mA
= 18 mA; f = 1 MHz
= 12 mA; f = 1 MHz
CONDITIONS
Marking code: L6-.
PIN
1
6
1
2
3
4
5
6
Top view
Fig.1 Simplified outline and symbol.
5
2
D
D
D
D
= 18 mA
= 12 mA
= 18 mA
= 12 mA
4
3
MAM480
drain (b)
source
gate 1 (b)
gate 1 (a)
gate 2
drain (a)
d (b)
d (a)


33
29



102
100




MIN. TYP. MAX. UNIT
DESCRIPTION
AMP
Product specification
a


38
34
2.4
1.7
15
105
103
1.3
1.4
3
3.5
g2
s
BF1206
6
30
48
44
2.9
2.2



1.9
2.0


AMP
b
g1 (a)
g1 (b)
V
mA
mS
mS
pF
pF
fF
dBV
dBV
dB
dB
dB
dB