BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 9

• Manufacturer Part Number: BF1206,115
• Description: MOSFET N-CH DUAL GATE 6V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1206,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057297115; BF1206; BF1206

NXP Semiconductors
2003 Nov 17
handbook, halfpage
handbook, halfpage
reduction
Dual N-channel dual-gate MOS-FET
gain
V
R
(1) V
(2) V
(3) V
Fig.11 Gate 1 current as a function of gate 2
V
see Fig.35.
Fig.13 Typical gain reduction as a function of AGC
(dB)
DS
DS
G1
(μA)
I G1
−10
−20
−30
−40
−50
30
5 V; T
= 91 k (connected to V
= 5 V; V
50
40
20
GG
GG
GG
1
0
0
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage; typical values; amplifier a.
voltage; typical values; amplifier a.
j
= 25 C.
GG
= 5 V; R
1
G1
2
= 91 k; f = 50 MHz; T
GG
(4) V
(5) V
); see Fig.35.
2
GG
GG
= 3.5 V.
= 3 V.
4
3
V G2-S (V)
V AGC (V)
amb
(1)
(2)
(3)
(4)
(5)
MLE265
MLE264
= 25 C;
6
4
9
handbook, halfpage
handbook, halfpage
V
T
Fig.12 Unwanted voltage for 1% cross-modulation
V
see Fig.35.
Fig.14 Drain current as a function of gain
amb
(dBμV)
DS
V unw
DS
(mA)
= 5 V; V
120
110
100
I D
= 25 C; see Fig.35.
= 5 V; V
90
80
24
16
8
0
0
0
as a function of gain reduction; typical values;
amplifier a.
reduction; typical values; amplifier a.
GG
GG
= 5 V; R
= 5 V; R
10
10
G1
G1
= 91 k; f = 50 MHz; f
= 91 k; f = 50 MHz; T
20
20
30
30
gain reduction (dB)
gain reduction (dB)
Product specification
40
40
unw
amb
= 60 MHz;
BF1206
MLE267
MLE266
= 25 C;
50
50