BF1102R,115 NXP Semiconductors, BF1102R,115 Datasheet - Page 3

• Manufacturer Part Number: BF1102R,115
• Description: MOSFET N-CH 7V 40MA SOT363R
• Manufacturer: NXP Semiconductors

Specifications of BF1102R,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055823115::BF1102R T/R::BF1102R T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2000 Apr 11
handbook, halfpage
Per MOS-FET unless otherwise specified
V
I
I
I
P
T
T
R
D
G1
G2
SYMBOL
stg
j
SYMBOL
DS
tot
Dual N-channel dual gate MOS-FETs
th j-s
(mW)
P tot
250
200
150
100
50
0
0
Fig.2 Power derating curve.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGS359
200
T
s
 102 C
3
CONDITIONS





65

MIN.
BF1102; BF1102R
VALUE
240
7
40
10
10
200
+150
150
Product specification
MAX.
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT