BF1102R,115 NXP Semiconductors, BF1102R,115 Datasheet - Page 2

• Manufacturer Part Number: BF1102R,115
• Description: MOSFET N-CH 7V 40MA SOT363R
• Manufacturer: NXP Semiconductors

Specifications of BF1102R,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055823115::BF1102R T/R::BF1102R T/R

NXP Semiconductors
FEATURES
 Two low noise gain controlled amplifiers in a single
 Specially designed for 5 V applications
 Superior cross-modulation performance during AGC
 High forward transfer admittance
 High forward transfer admittance to input capacitance
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
QUICK REFERENCE DATA
Note
1. T
2000 Apr 11
Per MOS-FET unless otherwise specified
V
I
P
y
C
C
F
X
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
D
package
ratio.
j
DS
tot
mod
Dual N-channel dual gate MOS-FETs
ig1-s
rss
fs

s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
T
I
I
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC
D
D
s
= 15 mA
= 15 mA
 102 C; note 1
CAUTION
CONDITIONS
2
PINNING - SOT363
handbook, halfpage
BF1102 marking code: W1.
BF1102R marking code: W2-.
PIN
1
2
3
4
5
6
1
6
Fig.1 Simplified outline and symbol.
5
2
gate 1 (1)
gate 2 (1 and 2)
drain (1)
drain (2)
source (1 and 2) gate 2 (1 and 2)
gate 1 (2)
4
3
BF1102
g 1 (1)
g 1 (2)



36




100
MIN.
BF1102; BF1102R
DESCRIPTION
g 2 (1, 2)
gate 1 (1)
source (1 and 2)
drain (1)
drain (2)
gate 1 (2)



43
2.8
30
2


AMP2
s (1, 2)
TYP.
Product specification
AMP1
BF1102R
7
40
200

3.6
50
2.8

150
MAX.
MBL029
V
mA
mW
mS
pF
fF
dB
dBV
C
d (1)
d (2)
UNIT