NE3508M04-T2-A CEL, NE3508M04-T2-A Datasheet - Page 3

• Manufacturer Part Number: NE3508M04-T2-A
• Description: AMP HJ-FET 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3508M04-T2-A

• Transistor Type: HFET
• Frequency: 2GHz
• Gain: 14dB
• Voltage - Rated: 4V
• Current Rating: 120mA
• Noise Figure: 0.45dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 18dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Polarity: N-Channel
• Power Dissipation: 125 mW
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Forward Transconductance Gfs (max / Min): 55 mS
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
50
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
0
0
f = 2 GHz
V
DS
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 2 V
NF
50
G
min
Ambient Temperature T
a
10
Drain Current I
Frequency f (GHz)
5
Mounted on Glass Epoxy PCB
(1.08 cm
100
20
2
× 1.0 mm (t) )
150
NF
G
D
a
(mA)
10
min
A
30
(˚C)
A
V
I
200
D
DS
= +25°C, unless otherwise specified)
= 10 mA
= 2 V
Data Sheet PG10586EJ01V0DS
250
15
40
20
18
16
14
12
10
8
6
4
2
0
20
18
16
14
12
10
8
6
4
2
0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
80
60
40
20
–1.0
0
0
1.0
f = 2 GHz
I
D
V
= 10 mA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
= 2 V
–0.8
Drain to Source Voltage V
Drain to Source Voltage V
1.5
Gate to Source Voltage V
1
–0.6
2.0
2
NF
G
min
a
–0.4
2.5
3
GS
DS
DS
–0.2
NE3508M04
3.0
(V)
(V)
(V)
V
4
GS
–0.1 V
–0.4 V
–0.2 V
–0.3 V
–0.5 V
= 0 V
3.5
0
5
20
18
16
14
12
10
8
6
4
2
0
3