NE3508M04-T2-A CEL, NE3508M04-T2-A Datasheet - Page 8

AMP HJ-FET 2GHZ SOT-343

NE3508M04-T2-A

Manufacturer Part Number
NE3508M04-T2-A
Description
AMP HJ-FET 2GHZ SOT-343
Manufacturer
CEL
Datasheets

Specifications of NE3508M04-T2-A

Transistor Type
HFET
Frequency
2GHz
Gain
14dB
Voltage - Rated
4V
Current Rating
120mA
Noise Figure
0.45dB
Current - Test
10mA
Voltage - Test
2V
Power - Output
18dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Polarity
N-Channel
Power Dissipation
125 mW
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Forward Transconductance Gfs (max / Min)
55 mS
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE3508M04-T2-A
Manufacturer:
RENESAS
Quantity:
12 000
Part Number:
NE3508M04-T2-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
RECOMMENDED SOLDERING CONDITIONS
methods and conditions other than those recommended below, contact your nearby sales office.
8
Infrared Reflow
Partial Heating
Caution Do not use different soldering methods together (except for partial heating).
This product should be soldered and mounted under the following recommended conditions.
Soldering Method
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (terminal temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
Data Sheet PG10586EJ01V0DS
Soldering Conditions
: 260°C or below
: 120±30 seconds
: 350°C or below
: 3 seconds or less
: 10 seconds or less
: 60 seconds or less
: 3 times
: 0.2%(Wt.) or below
: 0.2%(Wt.) or below
Condition Symbol
NE3508M04
HS350
IR260
For soldering

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