BLF6G22-180RN,112 NXP Semiconductors, BLF6G22-180RN,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G22-180RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180RN,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 30V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062733112

NXP Semiconductors
Table 8.
The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with
[1]
BLF6G22-180RN_22LS-180RN_1
Product data sheet
Component
C1, C3, C12, C13
C2
C4, C5, C14, C17
C6, C7
C8
C9
C10
C11
C15, C18
C16, C19
C20
L1
R1
R2, R3
Solder vertically.
List of components (see
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
SMD resistor
SMD resistor
Fig 7.
C1
C7
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
and thickness = 0.76 mm.
See
The drawing is not to scale.
Component layout
Figure 6
Table 8
C6
C5
C4
C8
for list of components.
and
Rev. 01 — 20 November 2008
R2
Figure
R1
C3
7)
Value
13 pF
1.4 pF
220 nF
100 nF
10 F
12 pF
1.1 pF
0.7 pF
1.5 F
10 F; 50 V
220 F; 63 V
-
2.7
6.8
C2
BLF6G22(LS)-180RN
[1]
[1]
[1]
[1]
[1]
Remarks
ATC 100B or capacitor of same quality
ATC 100B or capacitor of same quality
Vishay or capacitor of same quality
Vishay or capacitor of same quality
ATC 100B or capacitor of same quality
ATC 100B or capacitor of same quality
ATC 100B or capacitor of same quality
TDK or capacitor of same quality
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
r
C12
= 3.5 and thickness = 0.76 mm.
C17
C13
C14
C18
C15
C9
Power LDMOS transistor
C19
C16
C10
© NXP B.V. 2008. All rights reserved.
C11
C20
001aai647
r
= 3.5
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