BLS6G2731-120,112 NXP Semiconductors, BLS6G2731-120,112 Datasheet - Page 3

• Manufacturer Part Number: BLS6G2731-120,112
• Description: TRANS S-BAND PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2.7GHz ~ 3.1GHz
• Gain: 13.5dB
• Voltage - Rated: 60V
• Current Rating: 33A
• Current - Test: 100mA
• Voltage - Test: 32V
• Power - Output: 120W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061525112; BLS6G2731-120; BLS6G2731-120

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLS6G2731-120_6G2731S-120_1
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol
Z
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
P
P
t
t
DSS
DSX
GSS
r
f
j
case
fs
th(j-mb)
D
(BR)DSS
GS(th)
L
CC
L(1dB)
droop(pulse)
DS(on)
p
= 25 C unless otherwise specified.
in
= 25 C; unless otherwise specified, in a class-AB production circuit.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
transient thermal impedance from
junction to mounting base
Thermal characteristics
Characteristics
Application information
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
BLS6G2731-120; BLS6G2731S-120
Rev. 01 — 14 November 2008
p
= 100 s; = 10 %; RF performance at V
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 6.3 A
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
GS(th)
GS(th)
LDMOS S-band radar power transistor
Conditions
T
case
D
DS
D
D
= 0.6 mA
+ 3.75 V;
+ 3.75 V;
DS
t
t
t
t
Conditions
P
P
P
P
P
P
P
= 180 mA
= 9 A
p
p
p
p
= 28 V
= 85 C; P
L
L
L
L
L
L
L
= 100 s;
= 200 s;
= 300 s;
= 100 s;
= 0 V
= 120 W
= 120 W
= 120 W
= 120 W
= 120 W
= 120 W
= 120 W
L
= 120 W
= 10 %
= 10 %
= 10 %
= 20 %
Min Typ
60
1.4
-
27
-
8.1
-
Min Typ
-
-
12
-
-
40
-
-
-
DS
= 32 V; I
© NXP B.V. 2008. All rights reserved.
-
13
-
1.8
-
33
0.085 0.135
120
-
13.5 -
7
130
48
0
20
6
Dq
Typ
0.23 K/W
0.28 K/W
0.32 K/W
0.33 K/W
Max
-
2.4
4.2
-
450
-
Max Unit
-
32
-
-
-
0.5
50
50
= 100 mA;
3 of 12
Unit
W
V
dB
dB
W
%
dB
ns
ns
Unit
V
V
A
nA
S
A