BLS6G2731-120,112 NXP Semiconductors, BLS6G2731-120,112 Datasheet - Page 6

• Manufacturer Part Number: BLS6G2731-120,112
• Description: TRANS S-BAND PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2.7GHz ~ 3.1GHz
• Gain: 13.5dB
• Voltage - Rated: 60V
• Current Rating: 33A
• Current - Test: 100mA
• Voltage - Test: 32V
• Power - Output: 120W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061525112; BLS6G2731-120; BLS6G2731-120

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 6. Load power as a function of input power;
Fig 8. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
L
120
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 10 %.
= 120 W; V
= 32 V; I
2.75
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
(1)
(3)
(2)
G
D
p
2.95
Dq
p
= 100 mA; t
= 300 s; = 10 %.
8
3.05
BLS6G2731-120; BLS6G2731S-120
P
i
(W)
001aaj095
001aaj097
f (GHz)
p
= 300 s;
Rev. 01 — 14 November 2008
3.15
12
60
50
40
30
(%)
D
Fig 7. Load power as a function of input power;
Fig 9. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
160
120
L
p
80
40
15
13
11
0
9
2.65
typical values
frequency; typical values
0
V
P
DS
L
= 20 %.
= 120 W; V
= 32 V; I
LDMOS S-band radar power transistor
2.75
(1)
(3)
(2)
Dq
DS
4
= 100 mA; t
2.85
= 32 V; I
G
D
p
2.95
Dq
p
= 100 mA; t
= 100 s;
8
3.05
© NXP B.V. 2008. All rights reserved.
P
i
001aaj096
(W)
001aaj098
f (GHz)
p
= 20 %.
= 100 s;
3.15
12
60
50
40
30
(%)
D
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