MRF8S9260HSR3 Freescale Semiconductor, MRF8S9260HSR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S9260HSR3
• Description: FET RF N-CH 960MHZ 70V NI-880HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9260HSR3

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18.6dB
• Voltage - Rated: 70V
• Current - Test: 1.7A
• Voltage - Test: 28V
• Power - Output: 75W
• Package / Case: NI-880S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

MRF8S9260HR3 MRF8S9260HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Power Gain
Drain Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
Frequency
GS
GS
(In Freescale Test Fixture, 50 ohm system) V
920 MHz
940 MHz
960 MHz
= 400 μAdc)
= 1700 mAdc, Measured in Functional Test)
= 4.4 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
(dB)
18.8
18.7
18.6
G
ps
DD
= 28 Vdc, I
36.0
37.0
38.5
(%)
η
Symbol
V
V
V
D
ACPR
I
I
I
DS(on)
PAR
GS(th)
GS(Q)
G
DD
DQ
IRL
DSS
DSS
GSS
η
ps
D
= 28 Vdc, I
= 1700 mA, P
Output PAR
17.5
36.0
Min
1.5
2.4
0.1
5.5
(dB)
—
—
—
—
—
DQ
6.3
6.2
5.9
out
= 1700 mA, P
= 75 W Avg., f = 960 MHz,
-37.1
18.6
38.5
Typ
-14
2.3
3.1
0.2
5.9
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
ACPR
out
-39.5
-38.6
-37.1
(dB)
Class
Freescale Semiconductor
= 75 W Avg.,
-35.0
Max
20.0
3.9
0.3
10
-9
—
—
1
1
3
RF Device Data
(dB)
(continued)
-16
-18
-14
IRL
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
%