MRF8S9260HSR3 Freescale Semiconductor, MRF8S9260HSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S9260HSR3
• Description: FET RF N-CH 960MHZ 70V NI-880HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9260HSR3

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18.6dB
• Voltage - Rated: 70V
• Current - Test: 1.7A
• Voltage - Test: 28V
• Power - Output: 75W
• Package / Case: NI-880S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 130 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(-30 °C to +85°C)
(-30 °C to +85°C)
@ 1 dB Compression Point, CW
`
30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 75 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
ΔP1dB
P1dB
ΔG
G
DQ
sym
F
res
= 1700 mA, 920-960 MHz Bandwidth
Min
—
—
—
—
—
—
MRF8S9260HR3 MRF8S9260HSR3
0.0075
0.024
Typ
260
0.2
10
50
Max
—
—
—
—
—
—
dBm/°C
dB/°C
MHz
MHz
Unit
dB
W
3