MRF6S9045NR1 Freescale Semiconductor, MRF6S9045NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S9045NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.7dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF6S9045NR1 MRF6S9045NBR1
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
GS
GS
GS
= 200 μA)
= 350 mAdc, Measured in Functional Test)
= 1.0 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Test Methodology
Characteristic
Test Methodology
Characteristic
(T
C
MRF6S9045NR1
MRF6S9045NBR1
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
C
GS(th)
GS(Q)
C
G
GSS
= 350 mA, P
IRL
DSS
DSS
η
3
oss
rss
iss
ps
D
Symbol
out
R
30.5
Min
Package Peak Temperature
—
—
—
—
—
—
—
21
—
—
θJC
1
2
= 10 W Avg., f = 880 MHz, Single - Carrier
0.22
0.78
22.7
260
Typ
- 47
- 20
- 20
2.9
77
27
32
—
—
—
2
1A (Minimum)
IV (Minimum)
A (Minimum)
Value
Class
Freescale Semiconductor
1.0
1.1
(1,2)
Max
0.3
- 45
10
25
—
—
—
—
- 9
- 7
1
1
3
4
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
pF
%