MRF6S9045NR1 Freescale Semiconductor, MRF6S9045NR1 Datasheet - Page 7

• Manufacturer Part Number: MRF6S9045NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.7dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
1
V
f2 = 880.1 MHz, Two−Tone Measurements
5th Order
Figure 7. Intermodulation Distortion Products
DD
3rd Order
7th Order
= 28 Vdc, I
P
DQ
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 350 mA, f1 = 880 MHz
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
60
50
40
30
20
10
54
53
52
51
50
49
48
47
46
45
44
0
23
1
Gain and Drain Efficiency versus Output Power
V
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
ALT1
G
P1dB = 48.2 dBm (66.07 W)
DD
Figure 9. Pulsed CW Output Power versus
ps
24
= 28 Vdc, I
TYPICAL CHARACTERISTICS
T
C
P3dB = 48.6 dBm (72.44 W)
25
= 25_C
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
26
= 350 mA
P
in
100
, INPUT POWER (dBm)
Input Power
ACPR
27
25_C
V
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 880 MHz
DD
28
= 28 Vdc, I
10
−10
−20
−30
−40
−50
−60
−70
29
0
0.05
85_C
DQ
Figure 8. Intermodulation Distortion Products
30
V
f1 = 880 MHz, f2 = 880.1 MHz, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
85_C
DD
3rd Order
= 350 mA
5th Order
7th Order
0.1
= 28 Vdc, P
−30_C
31
η
D
Actual
−30_C
32
Ideal
25_C
25_C
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
= 45 W (PEP), I
MRF6S9045NR1 MRF6S9045NBR1
50
33
−25
−35
−45
−55
−65
−75
−85
1
DQ
= 350 mA
10
100
7