MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet - Page 11

• Manufacturer Part Number: MRF8P20160HSR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Figure 15. Output Peak- -to- -Average Ratio Compression (PARC)
15.7
15.6
15.5
15.4
15.3
15.2
15.1
14.9
14.7
14.8
Figure 16. Single- -Carrier W- -CDMA Power Gain, Drain
15
17
16
15
14
13
12
18
15
12
11
9
6
3
0
1995
1850
1
Broadband Performance @ P
TYPICAL CHARACTERISTICS — 2025 MHz
V
V
3.84 MHz Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
DD
GSB
DD
Figure 17. Broadband Frequency Response
Efficiency and ACPR versus Output Power
V
P
I
V
DQA
= 28 Vdc, P
DD
in
GSB
= 28 Vdc, I
2000
2010 MHz
= 1.6 Vdc, Single--Carrier W--CDMA
1900
= 0 dBm
= 28 Vdc
= 550 mA
= 1.6 Vdc
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
2005
P
DQA
out
1950
out
, OUTPUT POWER (WATTS) AVG.
= 37 W (Avg.), I
= 550 mA, V
2010
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2025 MHz
2010 MHz
10
2000
Gain
2015
IRL
GSB
DQA
PARC
2050
= 1.6 Vdc
IRL
= 550 mA
2020
2025 MHz
out
ACPR
= 20 Watts Avg.
2100
2025
100
ACPR
2150
η
2030
G
D
ps
η
G
D
ps
2035
2200
MRF8P20160HR3 MRF8P20160HSR3
300
0
--5
--10
--15
--20
--25
44
43
42
41
40
60
50
40
30
20
10
--30
--29
--30
--31
--32
--33
--34
0
0
--10
--20
--30
--40
--50
--60
--16
--16.5
--17
--17.5
--18
--18.5
--2.5
--3
--3.5
--4
--4.5
--5
11