MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8P20160HSR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performance
1880--1920 MHz Bandwidth
Typical Broadband Performance — 2025 MHz
V
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
GSB
P
P
IMD Symmetry @ 40 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Measurement made with device in a Symmetrical Doherty configuration.
out
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
= 1.6 Vdc, P
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW
out

= 37 W Avg., f = 2025 MHz, Single--Carrier W--CDMA
(1)
30 dBc
(In Freescale Doherty Test Fixture, 50 ohm system) V
Characteristic
Frequency
2025 MHz
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 37 W Avg.
(1)
(In Freescale 2025 Doherty Test Fixture, 50 ohm system) V
, IQ Magnitude Clipping
Symbol
VBW
IMD
(dB)
15.3
DD
∆P1dB
G
P1dB
P3dB
∆G
ps
G
= 28 Vdc, I
sym
F
res
DQA
44.0
Min
(%)
η
—
—
—
—
—
—
—
D
= 550 mA, V
MRF8P20160HR3 MRF8P20160HSR3
, Input Signal PAR = 9.9 dB @ 0.01%
0.009
0.01
Typ
107
160
0.2
13
50
Output PAR
GSB
DD
(dB)
6.8
= 28 Vdc, I
= 1.6 Vdc,
Max
—
—
—
—
—
—
—
DQA
= 550 mA,
ACPR
(dBc)
--30.0
dB/°C
dB/°C
MHz
MHz
Unit
dB
W
W
3