BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 4

• Manufacturer Part Number: BFQ67,215
• Description: TRANS NPN 50MA 10V 8GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFQ67,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1647-2; 933677740215; BFQ67 T/R

NXP Semiconductors
1998 Aug 27
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
I
Fig.4
C
= i
(mW)
(pF)
C re
P tot
400
300
200
100
0.8
0.6
0.4
0.2
c
0
0
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.2 Power derating curve.
50
5
100
10
150
V CB (V)
T s ( o C)
MRA607
MRA614
200
15
4
handbook, halfpage
handbook, halfpage
V
(GHz)
V
Fig.3
Fig.5
CE
CE
T f
h
= 8 V; T
FE
= 5 V.
120
10
4
80
40
8
6
2
0
0
0
0
DC current gain as a function of collector
current, typical values.
Transition frequency as a function of
collector current, typical values.
amb
= 25 C; f = 2 GHz.
10
20
20
40
Product specification
30
I
C
I
C
(mA)
(mA)
MBB303
MBB301
BFQ67
40
60